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| S VDS * * * * * * G -3-11 Tjmax S G 1-3-11 - TC TC tp VDD Tjmax EAR VDD Tjmax Gate source voltage static VGS VGS Ptot Reverse diode dv/dt 5) dv/dt 15 V/ns Tjmax Rev. 2.0 P 5 12-15 S V DS Tj RthJC RthJA *) V(BR)DSS V GS V GS VGS VDS V DS Tj Tj V GS V GS Tj Tj VDS VGS RG *) TO252: reflow soldering, MSL3; TO251: wavesoldering Rev. 2.0 P 5 12-15 S Tj Transconductance Input capacitance Output capacitance Reverse transfer capacitance g fs Ciss Coss Crss V DS V GS f V DS V GS V DS Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf V DD V GS RG Gate to source charge Gate to drain charge Qgs Qgd V DD V DD V GS V DD EAR f Coss Coss VDS VDS 5I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak P 5 12-15 S Tj TC Inverse diode direct current, pulsed I SM VGS Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm VR di F/dt Rev. 2.0 P 5 12-15 S TC TC Ptot TC VDS VDS Tj VGS tp VDS Rev. 2.0 Pa 5 12-15 S VDS Tj VGS f Tj V GS VDS VGS Tj Rev. 2.0 P VGS 5 12-15 S VGS VGS VDS max VDS max di/dt RG VDS VGS Tj IF RG V DS VGS Tj di/dt RG RG Rev. 2.0 P 5 12-15 S Tj VDS VGS RG dv/dt RG V DS VGS Tj dv/dt RG Tj VDS VGS RG RG V DS VGS Tj RG Rev. 2.0 P 5 12-15 S Tj Tj V DD Tj V(BR)DSS Tj f E AR V(BR)DSS Tj Rev. 2.0 P f 5 12-15 S Coss VDS V GS f VDS VDS VDS Rev. 2.0 P 5 12-15 SPS03N60C3 PG-TO-251-3-11 Rev. 2.0 Page 11 2005-12-15 SPS03N60C3 81726 Munchen Germany 2006 Rev. 2.0 P 12 5 12-15 |
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